III-nitride ultraviolet light-emitting diodes with delta doping
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Abstract
We present the results on the fabrication and characterization of 340 nm UV light-emitting diodes (LEDs) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition. By employing δ doping in the n- and p-type layers, we have demonstrated enhanced LED structural quality and emission efficiency. Combining with our interconnected microdisk LED architecture, the output power of a 300×300 μm2 bare LED chip measured from the sapphire side reached 50 μW under a standard dc operation condition (20 mA) at 4.6 V and 1.6 mW under a pulsed driving current. © 2003 American Institute of Physics.
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Li</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jin, S X" uniqKey="Jin S">S. X. Jin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0317772</idno><date when="2003-07-21">2003-07-21</date><idno type="stanalyst">PASCAL 03-0317772 AIP</idno><idno type="RBID">Pascal:03-0317772</idno><idno type="wicri:Area/Main/Corpus">00CF79</idno><idno type="wicri:Area/Main/Repository">00C155</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Semiconductor device measurement</term><term>ultraviolet sources</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>4272B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Diode électroluminescente</term><term>Mesure dispositif semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present the results on the fabrication and characterization of 340 nm UV light-emitting diodes (LEDs) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition. By employing δ doping in the n- and p-type layers, we have demonstrated enhanced LED structural quality and emission efficiency. Combining with our interconnected microdisk LED architecture, the output power of a 300×300 μm<sup>2</sup> bare LED chip measured from the sapphire side reached 50 μW under a standard dc operation condition (20 mA) at 4.6 V and 1.6 mW under a pulsed driving current. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>III-nitride ultraviolet light-emitting diodes with delta doping</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (K. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>LI (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>JIN (S. X.)</s1></fA11><fA11 i1="04" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>566-568</s1></fA20><fA21><s1>2003-07-21</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0317772</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We present the results on the fabrication and characterization of 340 nm UV light-emitting diodes (LEDs) based on InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition. By employing δ doping in the n- and p-type layers, we have demonstrated enhanced LED structural quality and emission efficiency. Combining with our interconnected microdisk LED architecture, the output power of a 300×300 μm<sup>2</sup> bare LED chip measured from the sapphire side reached 50 μW under a standard dc operation condition (20 mA) at 4.6 V and 1.6 mW under a pulsed driving current. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B72B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8560J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>4272B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diode électroluminescente</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Light emitting diodes</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Mesure dispositif semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor device measurement</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>ultraviolet sources</s0><s4>INC</s4></fC03><fN21><s1>209</s1></fN21><fN47 i1="01" i2="1"><s0>0329M000086</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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